Figure 1 from Design criteria for shoot-through elimination in Trench Field Plate Power MOSFET | Semantic Scholar
SiC Trench MOSFETs' Reliability under Short-Circuit Conditions | Encyclopedia MDPI
150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers
100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance
Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage - ScienceDirect
Vertical GaN Reverse Trench-Gate Power MOSFET and DC-DC Converter | SpringerLink
PCIM: First trench SiC mosfet is 2x better
The Trench Power MOSFET: Part I—History, Technology, and Prospects
Trench-structure SiC-MOSFETs and Actual Products
Energies | Free Full-Text | 4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance
The Trench Power MOSFET: Part I—History, Technology, and Prospects
Applied Sciences | Free Full-Text | Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling | HTML
Split Gate Technology MOSFETs - MCC | Mouser
Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage - ScienceDirect
US8697518B2 - Trench MOSFET with trench contact holes and method for fabricating the same - Google Patents
The Trench Power MOSFET: Part I—History, Technology, and Prospects
Trench MOSFET construction | Trench MOSFET basics
First' quasi-vertical gallium nitride trench MOSFET on six-inch silicon
1.2 kV SiC Trench MOSFETs for All-SiC Modules | Fuji Electric Global
Mitsubishi Electric develops trench-type SiC MOSFET with electric-field-limiting structure
Trench SiC MOSFET cuts on-resistance in half - eeNews Power
Mitsubishi Develops new Trench-type SiC-MOSFET - News
150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers
A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge
